A DC method for measuring all the gate capacitors in MOS devices with atto-farad resolution

摘要

In this paper we present a new methodology for measuring all the intrinsic gate capacitors (i.e., gate-source, gate-drain, and gate-bulk) in a MOS device using a DC measurement scheme. The structure consists of two matched MOSFET's, one of which has a reference capacitor attached to its gate. The test structure was fabricated and the results show a resolution in the atto-farads range. The test structures use charge coupling to measure the gate capacitors.