Applications of single-wafer thermal processing to 0.15-/spl mu/m high-density MROM

摘要

Feasibility of single-wafer rapid-thermal process as an alternative to the conventional batch-type furnace process is evaluated on a 0.15-/spl mu/m 128-Mb mask read only memory (MROM) product. Excellent gate oxide integrity and device characteristics are achieved with a single-wafer rapid-thermal process. Superior yield and product reliability by using single-wafer process tool have also been achieved. Shortened process cycle time and better thermal process uniformity by using single-wafer rapid-thermal processing are demonstrated.