Effect of Water Addition to Choline Chloride–Urea Deep Eutectic Solvent (DES) on the Removal of Post-Etch Resid ues Formed on Copper

摘要

Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by ${rm CF}_{4}/{rm O}_{2}$ plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water–DES solutions containing as high as 90% water in the temperature range of 20–40 $^{circ}{rm C}$. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water–DES solutions were found to be lower than that in deaerated 250:1 [${rm H}_{2}{rm O}$: hydrofluoric acid (HF) (49%) volume ratio] dilute HF solutions.