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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Precision Polishing of Single Crystal Diamond (111) Substrates Using a Sol-Gel (SG) Polishing Pad
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Precision Polishing of Single Crystal Diamond (111) Substrates Using a Sol-Gel (SG) Polishing Pad

机译:使用Sol-Gel(SG)抛光垫精确抛光单晶金刚石(111)基板

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摘要

In recent years, the application prospect of single crystal diamond (SCD) in the field of electronics is remarkable, and material processing technologies are the basis for the application of semiconductor materials. In this paper, a novel polishing method for SCD substrates was developed utilizing a sol-gel (SG) polishing pad, which is a semi-fixed abrasive polishing tool fabricated by SG technique. The surface morphology of SCD substrates was observed with a 3-D optical profiler and scanning electron microscopy (SEM). The results showed that the surface roughness was 1.32 nm Ra and the material removal rate of SCD (111) was about 120 nm/h. The polished diamond surfaces and wear debris were investigated using Raman spectroscopy and transmission electron microscopy (TEM), respectively. The results showed the removal mechanism of SCD using an SG polishing pad was mainly dominated by the mechanical removal and phase transformation, including the mechanical cleavage, amorphization, and graphitization.
机译:近年来,单晶金刚石(SCD)在电子领域的应用前景十分广阔,材料加工技术是半导体材料应用的基础。在本文中,利用溶胶-凝胶(SG)抛光垫开发了一种新型的SCD基板抛光方法,该抛光垫是通过SG技术制造的半固定式磨料抛光工具。用3-D光学轮廓仪和扫描电子显微镜(SEM)观察了SCD基底的表面形态。结果表明,表面粗糙度为1.32 nm Ra,SCD(111)的材料去除速率约为120 nm / h。分别使用拉曼光谱和透射电子显微镜(TEM)研究了抛光的钻石表面和磨损碎片。结果表明,使用SG抛光垫去除SCD的机理主要是机械去除和相变,包括机械裂解,非晶化和石墨化。

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