Reliability life-testing and failure-analysis of GaAs monolithicKu-band driver amplifiers

摘要

`Gallium-arsenide monolithic microwave integrated-circuit (MMIC)nKu-band driver amplifiers were life tested under accelerated highntemperature, DC and RF conditions until failure. These MMIC are used innvarious applications such as radar and satellite communication systems.nThe failure mechanisms controlling their reliability must be understoodnin order to improve the lifetime for these and other applications. Thisnpaper discusses the experimental procedures, statistical evaluation ofnthe data and failure analysis of the devices. To the authors' knowledge,nthis is the first report of RF life testing of dual-gate drivernamplifiers. The majority of the devices failed catastrophically due tonhigh drain current, while others failed parametrically due to low outputnpower. Failure analysis indicates that degradation of thenSi3N4 dielectric layer to be the main failurenmechanism in these MMIC. Statistical analysis revealed an activationnenergy of 0.87 eV and a median lifetime of 5.8·104nhours at 140°C channel temperature, which is consistent withnsurface-phenomena failure mechanisms