The dV/dt capability of MOS-gated thyristors

摘要

In this paper, a detailed study of the dV/dt capability ofnMOS-gated thyristors is performed. It is shown that in addition to thenconventional mode of dV/dt-induced turn-on in thyristors, termed thenintrinsic mode, there exists another distinct mode of dV/dt-inducednturn-on, peculiar to the MOS-gated thyristor structure, which thenauthors term the extrinsic dV/dt mode. The effective dV/dt capability isndetermined by both modes and is degraded by the presence of an externalngate-cathode resistance and parasitic gate-anode capacitance. Thenexistence of these two modes of dV/dt-induced turn-on is demonstratednexperimentally, and the effect of device parameters on the dV/dtncapability is studied