Thermal modeling and experimentation to determine maximum powercapability of SCR's and thyristors

摘要

This paper develops and explores a new thyristor thermal modelnthat accounts for the temperature-dependent nature of the devicenmaterial and construction. The model iteratively calculates temperaturenrise of a thyristor under arbitrary pulse conditions. The model is thenncorrelated to an experiment that places a silicon-controlled rectifiern(SCR) in a controlled test circuit at room and cryogenic temperatures.nThe knowledge gained from the thermal model and correlative experimentnwill allow the circuit designer to maximize thyristor capability innpulsed power applications. The increased power capability of operating anthyristor at cryogenic temperature is also examined