Physically based models of high power semiconductors including transient thermal behavior

摘要

Circuit simulation is a powerful tool for the design of high power converters, if suitable device models exist. Unfortunately, the commercially available circuit simulators do not have accurate models for high power semiconductors. Therefore, new device models are developed for power diodes and thyristor based devices, such as GTO, IGCT, and MTO. These models are based on semiconductor physics, which guarantees a wide range of validity. Electrical and thermal behavior is implemented, which allows transient temperature simulation. The models are programmed in the C++ language and are implemented in the widely used circuit simulator PSpice using the device equation option. Simulation results are compared with measurements.