A Novel Controlled Punch-Through IGCT for Modular Multilevel Converter With Overvoltage Bypass Function

摘要

The integrity of housing and feature of short circuit is hardly guaranteed for traditional power devices under overvoltage breakdown with following high surge energy. Thus, extra bypass thyristor is needed to achieve stable overvoltage bypass protection for submodules in modular multilevel converters at present. In this article, a novel controlled punch-through IGCT (CP-IGCT) is presented. Based on the punch-through breakdown principle instead of avalanche breakdown principle, the device can achieve breakdown at design voltage with uniformity, thermal stability, and robust package rupture-resilience. As a consequence, no extra sacrificial device is necessary. The fabricated sample proves a stable breakdown at 4000 V and a robust short-circuit feature after energy release of a 18 mF capacitor under 4500 V.