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IGBT Series Connection With Soft Switching and Power Recovery in Driver Power Supply

机译:IGBT系列与驾驶电源中软开关和电力恢复的连接

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The emergence of applications which require high-voltage switches has created a tendency to use semiconductor device series stacks. These series stacks permit operation at blocking voltages above semiconductor elements' nominal voltage. Insulated-gate bipolar transistors (IGBT) are currently utilized for controllability and switching speed, when these topologies are employed. The main challenge therewith is guaranteeing voltage balance between IGBTs, both when blocked and when switching transistors. Most of the methods which have been proposed to mitigate static and dynamic voltage unbalances increase transistor losses. The series stack loss-less high voltage switch (LHVS) which mitigates voltage unbalances, thus reducing switching losses, is presented in this paper. LHVS consists of a circuit, which ensures soft IGBT switching, an energy recovery circuit, and a gate delay compensation circuit. Additionally, the insulation voltage level is guaranteed to be equal between control circuit and high-voltage side of each IGBT. The operating principle of the LHVS is detailed in this paper, as is experimental validation which has been performed for three series stack modules. Static unbalances are reduced to 1%, while the differences between collector-emitter voltage curves in switching "ON" do not surpass 8 ns, and switching losses are reduced by 41%, as compared to the hard-switching topology.
机译:需要高压开关的应用的出现已经产生了使用半导体器件系列堆叠的趋势。这些系列堆叠允许在封闭半导体元件的标称电压的阻塞电压下操作。当采用这些拓扑时,当前用于无限栅极双极晶体管(IGBT)用于可控性和切换速度。其中的主要挑战是保证IGBT之间的电压平衡,既堵塞时又在开关晶体管时。已经提出的大多数方法以减轻静态和动态电压不平衡增加晶体管损耗。本文介绍了减少电压不平衡的堆栈损耗较少的高压开关(LHV),从而降低开关损耗。 LHV由电路组成,该电路确保软IGBT切换,能量回收电路和栅极延迟补偿电路。另外,保温电压电平保证在每个IGBT的控制电路和高压侧之间等于相同。本文详述了LHV的工作原理,是针对三个系列堆栈模块进行的实验验证。静态不平衡降低到1%,而与硬开关拓扑相比,切换“ON”的集电极 - 发射极电压曲线之间的差异在于,切换损耗减少了41%。

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