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Realization of High-Stability Flat-Top Pulsed Magnetic Fields by a Bypass Circuit of IGBTs in the Active Region

机译:通过有源区中的IGBT旁路电路实现高稳定性平顶脉冲磁场

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摘要

A high-stability flat-top pulsed magnetic field (FTPMF) is strongly needed for some scientific studies, such as nuclear magnetic resonance and specific heat measurement. This paper presents a new linear flat-top regulation bypass circuit to generate a high-stability FTPMF based on a battery bank power supply. The bypass circuit consists of insulated-gate bipolar transistors (IGBTs) in parallel that operate in the active region and are free of switch ripples. To achieve precise control of the IGBT current, the influence of the Miller effect and the nonlinearity of the IGBTs transfer characteristic are studied in detail. Then, a dual-feedback loop is designed and analyzed. A prototype consisting of a 1000V30kA battery bank and a bypass circuit of 1700V3600A IGBTs is developed. An FTPMF with a fieldduration of 23.370T100ms and a stability of 64.2ppm has been achieved.
机译:对于某些科学研究,例如核磁共振和比热测量,强烈需要高稳定性的平顶脉冲磁场(FTPMF)。本文提出了一种新的线性平顶调节旁路电路,该电路可基于电池组电源生成高稳定性FTPMF。旁路电路由并联的绝缘栅双极型晶体管(IGBT)组成,它们在有源区内工作并且没有开关纹波。为了精确控制IGBT电流,详细研究了米勒效应的影响和IGBT传递特性的非线性。然后,设计并分析了双反馈环路。开发了由1000V30kA电池组和1700V3600A IGBT的旁路电路组成的原型。 FTPMF具有23.370T100ms的持续时间和64.2ppm的稳定性。

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