机译:500
Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA;
KTH Royal Inst Technol, S-11428 Stockholm, Sweden;
DIEGM Univ Udine, I-33100 Udine, Italy;
Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA;
KTH Royal Inst Technol, S-11428 Stockholm, Sweden;
Bipolar junction transistor (BJT); high-temperature integrated circuit (IC); pulsewidth modulator (PWM); silicon carbide;
机译:闭环d
机译:加权-
机译:在
机译:千小时500°C耐用的4H-SIC JFET集成电路的加工和表征
机译:用于集成电路设计的4H-SiC低压MOSFET的建模和验证。
机译:一个高度双折射和非线性ASSE