8000-V 1000-A gate turn-off thyristor with low on-state voltage and low switching loss

摘要

An 8 kV, 1 kA gate turn-off thyristor (GTO) that has been designed with a combination of a p-i-n structure and a ringed-anode short structure is discussed. The GTO has been fabricated using a diffusion and epitaxial buffer process. As a consequence, low on-state voltage and low switching loss have been achieved, solving the two major problems in high-voltage GTOs. The device's structure, the p-i-n base process, and the electrical characteristics of the GTO are described.