Transient radiation hardness of the CMOSV 1.25 micron technology

摘要

Several devices fabricated in the AT&T/Sandia CMOSV 1.25 mu m technology have been characterized for transient radiation hardness. Dose rate upset levels exceeding 10/sup 9/ rad(Si)/s were obtained on 16-bit microprocessor, 64 K SRAM and 256 K SRAM ICs. Experimental data on neutron irradiated parts is given. Secondary photocurrents are shown to exist in logic structures which do not have adequate p-well contact placement. Layout guidelines are developed which allow the IC designer to eliminate secondary photocurrents in a given design.