Comparison of beam blanking SEM and heavy ion SEU tests on NASDA's 64 kbit SRAMs

摘要

Beam Blanking SEM (Beam Blanking Scanning Electron Microscope) was successfully used to measure and to map soft error sites on 64 kbit memory cells. Cross-section versus beam current and LET curves derived from BBSEM and heavy ion tests, respectively, have been compared. A linear relation between BBSEM current and heavy ion LET has been suggested.