Comparison of heavy ion and electron-beam upset data for GaAs SRAMs

摘要

The authors report and compare the results of two experiments designed to evaluate the extent to which focused electron beam pulses simulate energetic ion upset phenomena in GaAs memory circuits irradiation by heavy ion particle beams and upset mapping using focused electron pulses. Linear energy transfer thresholds and upset cross sections are derived from the data for both methods. The comparison shows good agreement, indicating that for these circuits electron-beam-pulse mapping is a viable simulation technique.