HEAVY ION UPSET HARDENED FLOATING BODY SRAM CELL

摘要

PPROBLEM TO BE SOLVED: To provide an SOICMOSSRAM which is immune to soft errors. PSOLUTION: A CMOS memory element comprises silicon-on-insulator MOSFET transistors. At least one of the MOSFET transistors is configured such that the body of the transistor is not connected to a voltage source and is instead permitted to electrically float. The memory element has increased immunity to errors caused by heavy ion radiation. PCOPYRIGHT: (C)2010,JPO&INPIT