Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology

摘要

Accelerated alpha-soft error rate (SER) measurements are carried out on regular and radiation-hardened SRAMs in a 65 nm CMOS technology. Results are first compared to previous experimental radiation data in 130 nm and 90 nm. Second, the SER increase measured in 65 nm is investigated through (i) multiple cell upsets (MCU) counting and classification from experimental bitmap errors and (ii) full 3-D device simulations on SRAM bitcells to assess the PMOS-off sensitivity and the NMOS SEU threshold LET (LETth) of each tested technologies. Finally, process changes are also scanned to shed light on the 65 nm SRAM response to alpha particles