Dose rate and total dose 1/f noise performance of GaAs heterojunction bipolar transistors

Hiemstra D.M.

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Dose rate and total dose 1/f noise performance of GaAs heterojunction bipolar transistors

机译：GaAs异质结双极晶体管的剂量率和总剂量1 / f噪声性能

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GaAs heterojunction bipolar transistor 1/f noise performance is demonstrated to be unaffected by dose rate and total dose. This is believed to be due to shielding provided by the N/sup +/ collector from the GaAs substrate.

机译：事实证明，GaAs异质结双极晶体管1 / f的噪声性能不受剂量率和总剂量的影响。据信这是由于N / sup + /收集极对GaAs衬底的屏蔽作用。

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《IEEE Transactions on Nuclear Science》 |1996年第6期|P.3076-3080|共5页
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Hiemstra D.M.;
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正文语种 eng
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1. Dose rate and total dose dependence of low frequency noise performance, I-V curves and sidegating for GaAs MESFETs [J] . Hiemstra D.M., Kizeevi A.A. IEEE Transactions on Nuclear Science . 1998,第6期

机译：GaAs MESFET的低频噪声性能，I-V曲线和旁通的剂量率和总剂量依赖性
2. Dose rate and total dose dependence of the 1/f noise performance of a GaAs operational amplifier during irradiation [J] . Hiemstra D.M. IEEE Transactions on Nuclear Science . 1995,第6期

机译：GaAs运算放大器在辐射过程中1 / f噪声性能的剂量率和总剂量依赖性
3. Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistors [J] . Costa D., Tutt M.N. IEEE Transactions on Electron Devices . 1994,第8期

机译：AlGaAs / GaAs异质结双极晶体管中1 / f噪声与微波性能之间的权衡
4. Dose rate and total dose dependence of the 1/f noise performance of an operational amplifier fabricated on a complimentary bipolar process on bonded wafer [C] . Hiemstra, D.M. . 1998

机译：在键合晶圆上通过互补双极工艺制造的运算放大器的1 / f噪声性能的剂量率和总剂量依赖性
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Similar effects on murine haemopoietic compartment of low dose rate single dose and high dose rate fractionated total body irradiation. Preliminary results after a unique dose of 750 cGy. [O] . T. Girinski, G. Socie, J. M. Cosset, 1990

机译：低剂量率单剂量和高剂量率分次全身照射对鼠造血区室的类似作用。独特剂量为750 cGy后的初步结果。
7. Excess noise in microwave GaInP/GaAs heterojunction bipolar transistors [O] . Plana R., Roux J.P, Escotte L., 1994

机译：微波GaInP / GaAs异质结双极晶体管中的噪声过大
8. Total Dose and Dose Rate Models for Bipolar Transistors in Circuit Simulation. [R] . Campbell, P. M., Wix, S. D. 2013

机译：电路仿真中双极晶体管的总剂量和剂量率模型。

Dose rate and total dose 1/f noise performance of GaAs heterojunction bipolar transistors

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