Improvements in dynamic and noise performance of cryogenic GaAs monolithic ASICs

摘要

We have developed two new ASICs for cryogenic operation using a GaAs ion-implanted MESFET process. A preamplifier chip for LAr calorimetry has white series noise above 1 MHz with a spectral density of 0.32 nV//spl radic/Hz. Power dissipation is 66 mW and GBW 1.7 GHz. Operation at 22 mW power dissipation is also possible, with lower noise and speed performance. A cryogenic buffer/LED driver with 0.6% integral non-linearity for 100 mA maximum output current and 8.7 mW standing power dissipation was also developed.