The effect of dose rate on radiation-induced current gain degradation was quantified for radiation-hardened poly-Si emitter n-p-n bipolar transistors over the range of 0.005 to 294 rad(Si)/s. Degradation increases sharply with decreasing dose rate and saturates near 0.005 rad(Si)/s. The amount of degradation enhancement at low dose rates decreases monotonically with total dose. In addition, the effect of ambient temperature on radiation-induced gain degradation at 294 rad(Si)/s was investigated over the range of 25 to 240/spl deg/C. Degradation is enhanced with increasing temperature while simultaneously being moderated by in situ annealing, such that, for a given total dose, an optimum irradiation temperature for maximum degradation results. The optimum irradiation temperature decreases logarithmically with total dose and, for a given dose, is smaller than optimum temperatures reported previously for p-n-p devices. High dose rate irradiation at elevated temperatures is less effective at simulating low dose rate degradation for the n-p-n transistor than for the p-n-p transistors. However, additional degradation of the n-p-n device at elevated temperatures is easily obtained using overtest. Differences in the radiation responses of the device types are attributed to the relative effects of oxide trapped charge on gain degradation. High dose rate irradiation near 125/spl deg/C is found to be suitable for the hardness assurance testing of these devices provided a design margin of at least two is employed.
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