Dose and dose rate effects on NPN bipolar junction transistors irradiated at high temperature

摘要

The effect of high temperature irradiation on commercial bipolar junction transistors has been studied for four dose rates. The experimental data presented in this paper show two base current degradation peaks as a function of irradiation temperature. An attempt to physically explain the obtained experimental results is proposed. This explanation is based on the difference in the enhancement-annealing kinetic of the elementary processes at play. The combined effects of high irradiation temperatures and dose rate are also discussed.