Non-destructive repetitive readout in high resolution silicon detectors

摘要

The theoretical basis of the non-destructive repetitive readout are reviewed. The shape of the induced charge and current signals is discussed. The optimum filter with assigned time domain constraints (e.g. arbitrary finite duration) and in presence of any kind of uncorrelated, stationary, additional noises has been calculated for boundary cases of the induced current signal shape. A test structure to perform non destructive repetitive readout of the signals from high resolution detectors built on a high purity silicon substrate such as Silicon Drift Detectors and fully depleted pn Charge-Coupled Devices has been designed and produced.