The effects of chemical etching on the charge collection efficiency of {111} oriented Cd/sub 0.9/Zn/sub 0.1/Te nuclear radiation detectors

摘要

We report the effects of different etchants on the mobility-lifetime product (/spl mu//spl tau/) of cadmium zinc telluride (CZT). The /spl mu//spl tau/ values were obtained via the Hecht relation. The effects of surface recombination were also investigated using photoconductivity measurements. Results were obtained for a {111} oriented CZT single crystal. We find that the surfaces behave differently after etching. Values for surface recombination rates for [111]A and [111]B surfaces can vary by up to two orders of magnitudes for the same etchant. This large variation in surface recombination rates affects the charge collection efficiency and detector performance. We report surface treatments that enhance the charge collection efficiency for [111]A and [111]B surfaces. Data describing the detector response for Am/sup 241/ spectra current-voltage relationship, and bulk /spl mu//spl tau/ values and surface recombination rates are shown for different etchants.