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机译:/ spl伽马射线/射线对与检测器兼容的工艺制造的JFET器件和电路的影响
Dipt. di Informatica e Telecomunicazioni, Univ. di Trento, Italy;
JFET integrated circuits; junction gate field effect transistors; gamma-ray effects; semiconductor device noise; gamma-ray astronomy; X-ray astronomy; biomedical imaging; gamma-ray effects; JFET devices; JFET-based circuits; detector-compatible technologies; static characteristics; signal characteristics; noise characteristics; fabrication technology; monolithical readout electronics integration; highly resistive substrate; multielectrode silicon detector; radiation tolerance; charge sensitive amplifier; low-noise applications; industrial application; medical imaging; X-ray astronomy; gamma-ray astronomy; high energy physics experiments; gamma radiation effects; integrated sensors; junction field effect transistor;
机译:/ splγ/射线和中子对单片JFET电路的噪声行为的影响
机译:JFET / SOS设备。二。伽马射线诱导的效应
机译:在4英寸SOD晶圆上制造的SOD电路的#γ#射线的辐射硬度特性
机译:JFET / SOS器件:处理和伽玛辐射效果
机译:基于4H碳化硅横向JFETS的功率器件和集成电路。
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机译:高电阻率,探测器级硅制造的CMOS器件和电路的特性
机译:用sOI(绝缘体上硅)薄膜制造的抗辐射JFET器件和CmOs电路