SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistors

摘要

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physics-based formalism is used for describing the radiation effects within the framework of the Gummel-Poon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE parameters is outlined, from which a simplified radiation model is established. The latter is presented and implemented in AIM-Spice, and it is shown to agree quite well with experiments. Dynamic effects including annealing are also discussed.