Modeling Single Event Crosstalk in Nanometer Technologies

摘要

With advances in CMOS technology, circuits become increasingly more sensitive to transient pulses caused by single event (SE) particles. On the other hand, coupling effects among interconnects can cause SE transients to contaminate electronically unrelated circuit paths which may increase the SE susceptibility of CMOS circuits. The coupling effects among interconnects need to be considered in single event hardening, modeling and analysis of CMOS logic gates due to technology scaling effects that increase both SE vulnerability and crosstalk effects. This work, for the first time, proposes an SE crosstalk noise estimation method for use in design automation tools. The proposed method uses an accurate 4-$pi$ model for interconnect and correctly models the effect of non-switching aggressors as well as aggressor tree branches noting the resistive shielding effect. The SE crosstalk noise expressions derived show very good results in comparison to HSPICE results. Results show that average error for noise peak is about 6.2% while allowing for very fast analysis in comparison to HSPICE.