Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation

摘要

Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defect formation. This work addresses the limits of the post-irradiation gate stress relevance used for Power MOSFETs space qualification.