An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology

摘要

The single event effect (SEE) response of devices and differential pairs in a 32-nm SOI CMOS technology is explored using laser-induced carrier injection and TCAD simulations. Both nFETs and pFETs in this technology exhibit similar sensitive area to laser-induced SEE and are strongly dependent on the drain bias condition. TCAD simulations were conducted in order to confirm results and utilize a 3-D mixed-mode simulation approach to more accurately model testing conditions. The differential pair (diff. pair) circuit SEE response extends the discussion to include the use of these devices in a core analog/RF circuit block. The analysis includes the use of floating body (FB) and body-connected (BC) devices. Body-connected FETs tend to exhibit a transient response that is much shorter in duration when compared directly to its floating body counterpart.