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Infrared photodiode based on colloidal PbSe nanocrystal quantum dots

机译:基于胶体PbSe纳米晶体量子点的红外光电二极管

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摘要

We report in this paper our studies on the photoconductivity and photovoltaic effects of colloidal PbSe nanocrystal quantum dots (NQDs) which were embedded in conductive polymer matrices to form hybrid polymer/NQD infrared photodiodes. The generation of photocarriers in PbSe NQDs and their transport in NQD-polymer composites were described by a simplified band diagram picture of the device. Both photocurrent and photovoltage outputs were measured from the NQD-incorporated photodiode upon the illumination of near-infrared (NIR) light, whereas the net polymer-based devices do not exhibit any photoresponsivity. The intensity dependence of the photocurrent indicates the pseudomonomolecular recombination kinetics in the NQD-polymer composite. The measured photocurrent spectrum is consistent with the absorption characteristic of PbSe NQDs. Further enhancement of the photodiode efficiency can be achieved by engineering the nanocrystal surface to reduce the potential barriers due to the ligant capping molecules.
机译:我们在本文中报告了我们对胶体PbSe纳米晶体量子点(NQD)的光电导和光伏效应的研究,这些量子点嵌入导电聚合物基质中以形成混合聚合物/ NQD红外光电二极管。 PbSe NQDs中的光生载流子及其在NQD-聚合物复合物中的传输通过器件的简化能带图描述。在近红外(NIR)光照射下,从装有NQD的光电二极管测量光电流和光电压输出,而基于聚合物的净器件则不表现出任何光响应性。光电流的强度依赖性表明NQD-聚合物复合物中的假单分子重组动力学。测得的光电流谱与PbSe NQD的吸收特性一致。通过对纳米晶体表面进行工程处理以减少由于配位帽分子引起的势垒,可以进一步提高光电二极管的效率。

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