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首页> 外文期刊>IEEE transactions on nanotechnology >Spin-Cast Deposition of CdSe-CdS Core-Shell Colloidal Quantum Dots on Doped GaAs Substrates: Structural and Optical Characterization
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Spin-Cast Deposition of CdSe-CdS Core-Shell Colloidal Quantum Dots on Doped GaAs Substrates: Structural and Optical Characterization

机译:掺杂GaAs衬底上CdSe-CdS核壳胶体量子点的自旋铸造沉积:结构和光学表征

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摘要

The detailed study of the effects of spin recipe and GaAs substrate doping (i.e., semi-insulating, n-type, or p-type) on the structural and optical properties of spin-cast CdSe-CdS core-shell CQDs provides insight into the surface adsorption and charge transfer mechanisms that will influence any potential optoelectronic device. The hypotheses of this study are: i) it is possible to establish spin-casting recipes that yield a thin film of CQDs with large surface density and uniform size, and ii) it is possible to control the optical response of CQDs by varying the GaAs substrate doping to influence charge transfer processes. As a result of these measurements, we have been able to demonstrate a strong dependence of spin-cast CQD structural properties on the doping type of the GaAs substrate, as well as evidence from measured optical properties to support the idea that hot carriers photoexcited in the GaAs substrate are transferred either to the CQD surface states through organic surface ligands or directly to confined states within the CQD.
机译:对自旋配方和GaAs衬底掺杂(即半绝缘,n型或p型)对自旋浇铸CdSe-CdS核-壳型CQD的结构和光学性质的影响的详细研究提供了有关表面吸附和电荷转移机制,将影响任何潜在的光电器件。该研究的假设是:i)可以建立自旋铸造配方,以产生具有大表面密度和均一尺寸的CQD薄膜,并且ii)可以通过改变GaAs来控制CQD的光学响应。衬底掺杂会影响电荷转移过程。这些测量的结果是,我们已经能够证明自旋铸造CQD结构特性对GaAs衬底的掺杂类型的强烈依赖性,以及从测量到的光学特性中得到的证据,可以证明热载流子在光电子中被激发。 GaAs基板通过有机表面配体转移到CQD表面状态,或直接转移到CQD内的受限状态。

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