Localized Growth of Carbon Nanotubes on CMOS Substrate at Room Temperature Using Maskless Post-CMOS Processing

摘要

Carbon nanotubes (CNTs) have been successfully synthesized on foundry CMOS substrate using maskless post-CMOS surface micromachining and localized heating techniques. The integrated heater is directly made of gate polysilicon and suspended over a micromachined cavity for thermal isolation. The synthesized CNTs are connected to CMOS interconnect metal layers without the need of any metal deposition. It is experimentally verified that the electrical properties of the neighboring CMOS transistors are unchanged after CNT growth.