Bar-grid oscillators

摘要

Grid oscillators are an attractive way of obtaining high power levels from the solid-state devices, since potentially the output powers of thousands of individual devices can be combined. The active devices do not require an external locking signal, and the power combining is done in free space. Thirty-six transistors were mounted on parallel brass bars, which provide a stable bias and have a low thermal resistance. The output power degraded gradually when the devices failed. The grid gave an effective radiated power of 3 W at 3 GHz. The directivity was 11.3 dB, and the DC-to-RF efficiency was 22%. Modulation capabilities of the grid were demonstrated. An equivalent circuit model for the grid is derived, and comparison with experimental results is shown.