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Comments on 'Josephson effect gain and noise in SIS mixers' (and reply)

机译:关于“ SIS混频器中约瑟夫森效应增益和噪声”的评论(和回复)

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For the original article see ibid., vol.40, no.5, p.820-6 (1992). The commenter points out that, in the above-titled paper by M.J. Wengler et al., no references published prior to 1982 are cited. As a result, no mention is made of a considerable body of relevant published work. The commenter discusses some of this earlier work. One of the authors, M.J. Wengler, replies that the earlier work all used point contact junctions with low capacitance and with nonhysteretic current-voltage (I-V) curves which fit the resistively shunted Josephson junction (RSJ) circuit model, whereas he and his coauthors considered planar SIS diodes with higher capacitance and with completely hysteretic I-Vs which are not even similar to the RSJ model predictions. He offers some further discussion of the ways in which their results are distinct from the earlier work.
机译:原文请参见同上,第40卷,第5期,第820-6页(1992)。评论者指出,在M.J. Wengler等人的上述论文中,没有引用1982年之前发表的参考文献。结果,没有提及相当多的相关出版作品。评论者讨论了一些早期工作。其中一位作者MJ Wengler回答说,较早的工作全部使用了具有低电容和无磁滞电流-电压(IV)曲线的点接触结,这些曲线符合电阻分流的约瑟夫森结(RSJ)电路模型,而他和他的合著者认为平面SIS二极管具有更高的电容和完全滞后的I-V,甚至与RSJ模型的预测都不相似。他进一步讨论了其结果与早期工作截然不同的方式。

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