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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Folded U-Shaped Microwire Technology for Ultra-Compact Three-Dimensional MMIC's
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Folded U-Shaped Microwire Technology for Ultra-Compact Three-Dimensional MMIC's

机译:折叠式U形微线技术,用于超紧凑型3维MMIC

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摘要

A microwire technique has been developed for fabricating three-dimensional (3-D) structures for use in ultra-compact GaAs monolithic microwave/millimeter wave integrated circuits (MMIC). By folding metal into a U-shapedl wall and burying it in a relatively thick polyimide insulator, vertical microwires can be made with greatly reduced process complexity. This technique also offers process compatibility with multilevel interconnects. In this paper, the fundamental characteristics of the proposed Ushaped microwire are dkcussed and its applications to 3-D passive elements and circuits are demonstrated. The characteristics of the U-shaped microwires are almost the same as those of I-shaped microwires and can be accurately estimated and designed by using numerical analysis. The fabricated and designed transmission lines are one-half to one-third the size of conventional lines with the same transmission loss, and if the microwire is also used as a shielding wall, the occupied area can be made much smaller. Miniature inductors made of vertical U-shaped microwires exhibit a self-resonance freqnency as high as that of conventional inductors, with one-half the size and offer a great advantage in L- or S-band applications. A fabricated miniature wideband 3-D balun had an insertion loss of 1.5 + 1 dB at frequencies from 10 to 30 GHz, and an amplitude and phase balance of 2 dB and 5/spl deg/, respectively.
机译:已经开发了用于制造用于超紧凑GaAs单片微波/毫米波集成电路(MMIC)的三维(3-D)结构的微线技术。通过将金属折叠成U形壁并将其埋在相对较厚的聚酰亚胺绝缘体中,可以大大降低工艺复杂性来制造垂直微线。该技术还提供了与多层互连的过程兼容性。在本文中,讨论了所提出的U型微线的基本特性,并演示了其在3D无源元件和电路中的应用。 U形微丝的特性与I形微丝的特性几乎相同,并且可以通过数值分析来精确地估计和设计。所制造和设计的传输线是具有相同传输损耗的传统传输线尺寸的一半到三分之一,并且如果将微线也用作屏蔽墙,则可以使占用的面积小得多。由垂直U形微线制成的微型电感器具有与常规电感器一样高的自谐振频率,尺寸只有其一半,并且在L或S波段应用中具有很大的优势。制成的微型宽带3-D平衡-不平衡变换器在10至30 GHz的频率下具有1.5 + 1 dB的插入损耗,振幅和相位平衡分别为2 dB和5 / spl deg /。

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