Analytical nonlinear HEMT model for large signal circuit simulation

摘要

A new nonlinear high electron mobility transistor (HEMT) model based on the Curtice model is described. This model introduces terms for the leakage current for subthreshold bias, drain voltage dependencies of knee voltage, drain conductance and threshold voltage, transconductance enhancement at high frequencies caused by DX centers, and the bias dependence of capacitance. Applying this model to pseudomorphic double-recessed gate HEMT's gives an average error of 2.6% for DC current and 10% for S-parameters.