A new empirical large-signal HEMT model

摘要

We propose an empirical large-signal model of high electron mobility transistors (HEMTs). The bias-dependent data of small-signal equivalent circuit elements are obtained from S-parameters measured at various bias settings. And C/sub gs/, C/sub gd/, g/sub m/, and g/sub ds/, are described as functions of V/sub gs/ and V/sub ds/. We included our large-signal model in a commercially available circuit simulator as a user-defined model and designed a 30/60-GHz frequency doubler. The fabricated doubler's characteristics agreed well with the design calculations.