Optimum Bias Load-Line Compensates Temperature Variation of Junction Diode's RF Resistance

摘要

This paper presents a novel temperature-compensation technique to compensate variation of the junction diode's RF resistance. Here we have theoretically analyzed and experimentally demonstrated the temperature sensitivity of the junction diode's RF resistance and proposed an optimum dc-bias load line technique to minimize temperature variation of RF resistance of the Schottky barrier, p-i-n, and p-n junction diodes. The proposed optimum load line biasing technique eliminates the requirement of conventional temperature-compensation circuits with temperature sensors to achieve temperature-invariant RF performance of diode-based RF circuits such as a linearizer, attenuator, phase shifter, etc. for various RF applications where it experiences wide temperature variations. The circuit responds directly to the junction temperature of the diode; thus, there will be no compensation error due to temperature gradient and self-heating of the diodes. This technique is very simple, accurate, and suitable to implement in monolithic-microwave integrated-circuit technology