Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs

摘要

A temperature-dependent RF large-signal model is constructed by modifying the Verilog-A code of the Angelov model for unique characteristics of GaN MOSHFETs. Different from the previously reported EEHEMT-based model, the present electro-thermal model can fit the temperature effects on threshold shift and transconductance degradation, the drain current in the linear region, and the gate capacitance near the cutoff region. As the result, the power, gain, efficiency, linearity, drain current, and gate current of both Class-A and Class-AB amplifiers are accurately simulated over a wide range of input powers, matching impedances, and ambient temperatures.