Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier

摘要

In this paper, the design, implementation, and experimental results of a high-efficiency wideband GaN-HEMT power amplifier are presented. A method based on source–pull/load–pull simulation has been used to find optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks. Large-signal measurement results show that, across 1.9–4.3 GHz, 9–11-dB power gain and 57%–72% drain efficiency are obtained while the corresponding power-added efficiency (PAE) is 50%–62%. Moreover, an output power higher than 10 W is maintained over the band. Linearized modulated measurements using a 20-MHz long-term evolution signal with 11.2-dB peak-to-average ratio show an average PAE of 27% and 25%, an adjacent channel leakage ratio of ${-}$44 and ${-}$42 dBc at 2.5 and 3.5 GHz, respectively.