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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >LC-VCO Design Optimization Methodology Based on the $g_m/I_D$ Ratio for Nanometer CMOS Technologies
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LC-VCO Design Optimization Methodology Based on the $g_m/I_D$ Ratio for Nanometer CMOS Technologies

机译:基于 $ g_m / I_D $ 比率的LC-VCO设计优化方法,用于纳米CMOS技术

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摘要

In this paper, an LC voltage-controlled oscillator (LC-VCO) design optimization methodology based on the $g_m/I_D$ technique and on the exploration of all inversion regions of the MOS transistor (MOST) is presented. An in-depth study of the compromises between phase noise and current consumption permits optimization of the design for given specifications. Semiempirical models of MOSTs and inductors, obtained by simulation, jointly with analytical phase noise models, allow to get a design space map where the design tradeoffs are easily identified.
机译:本文基于 $ g_m / I_D $ 的LC压控振荡器(LC-VCO)设计优化方法。提出了关于MOS晶体管(MOST)的所有反转区域的技术。对相位噪声和电流消耗之间折衷的深入研究,可以优化给定规格的设计。通过仿真获得的MOST和电感器的半经验模型,再加上分析性相位噪声模型,可以得到一个设计空间图,在其中可以轻松识别设计折衷。

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