AlGaN/GaN HEMT With Distributed Gate for Channel Temperature Reduction

摘要

Self heating in electronic devices reduces their performance and lifetime. A novel high electron-mobility transistor (HEMT) layout that reduces the channel temperature is presented. To decrease self heating, the new distributed gate (DG) HEMT is configured with multiple, active, and nonactive sections along each gate-stripe. Simulations and experimental results indicating the improved performance of the new layout are presented. Compared to a conventional HEMT, the fabricated novel DG GaN HEMT demonstrated a decrease in channel temperature from 178 °C to 150 °C, accompanied by a 3-dB increase in output power, and 13-fold increase in lifetime.