首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Two CMOS Dual-Feedback Common-Gate Low-Noise Amplifiers With Wideband Input and Noise Matching
【24h】

Two CMOS Dual-Feedback Common-Gate Low-Noise Amplifiers With Wideband Input and Noise Matching

机译:两个具有宽带输入和噪声匹配功能的CMOS双反馈共栅低噪声放大器

获取原文
获取原文并翻译 | 示例
           

摘要

This paper presents two CMOS common-gate (CG) low-noise amplifiers (LNAs) using different dual-feedback techniques, significantly reducing noise figure (NF) to around 2 dB over a wide frequency range. The proposed first CG LNA uses $g_{m}$ -boosted feedback and shunt-series transformer feedback to relieve the tradeoff between input and noise matching. The proposed second CG LNA further extends the input matching bandwidth by using $g_{m}$-boosted feedback and shunt–shunt transformer feedback. Moreover, the transformer used for feedback in both CG LNAs causes gain peaking and thus a considerable increase of 3-dB gain bandwidth. After implementation in a 0.18-$mu{hbox {m}}$ CMOS process, the first and second CG LNAs achieve an NF of 1.9–2.6 dB over a 3-dB gain bandwidth of 7 and 10 GHz, respectively. The comparison between simulated and measured results shows a good agreement.
机译:本文介绍了使用不同的双反馈技术的两个CMOS共栅(CG)低噪声放大器(LNA),可在很宽的频率范围内将噪声系数(NF)显着降低到大约2 dB。拟议的第一个CG LNA使用 $ g_ {m} $ 增强的反馈和分流串联变压器反馈来减轻两者之间的权衡输入和噪声匹配。提议的第二个CG LNA通过使用 $ g_ {m} $ 增强的反馈和分流-分流器进一步扩展了输入匹配带宽。变压器反馈。此外,两个CG LNA中用于反馈的变压器会引起增益峰值,从而显着增加了3-dB的增益带宽。在以0.18- $ mu {hbox {m}} $ CMOS工艺实现后,第一和第二个CG LNA实现了分别在7 GHz和10 GHz的3 dB增益带宽上的NF为1.9–2.6 dB。模拟结果与测量结果之间的比较显示出很好的一致性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号