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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >A $W$ -band High LO-to-RF Isolation Triple Cascode Mixer With Wide IF Bandwidth
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A $W$ -band High LO-to-RF Isolation Triple Cascode Mixer With Wide IF Bandwidth

机译:具有宽IF带宽的$ W $频段高LO至RF隔离三源共源共混器

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摘要

A $W$-band triple cascode down conversion mixer using a 0.15- $mu{hbox {m}}$ pseudomorphic high-electron mobility transistor process is proposed in this paper. Due to the utilization of modified bias topology, resistive mixing core, and IF low-pass filter, this circuit has a very wide IF bandwidth. Moreover, the triple cascode structure is used in this mixer for high local oscillator (LO)-to-RF isolation and compact chip area. The measured results illustrate that the mixer achieves 9–13-dB upper sideband conversion loss with dc-to-26-GHz IF bandwidth, and the LO-to-IF, LO-to-RF, and RF-to-IF isolation are 38, 42, and 40 dB, respectively with 5-dBm LO power at 86 GHz. When the LO power is 7 dBm at 96 GHz, the upper sideband conversion loss is 10–14 dB with dc-to-24-GHz IF bandwidth, and LO-to-IF, LO-to-RF, and RF-to-IF isolation are 29, 41.5, and 45 dB, respectively. The power consumption is 24 mW and chip area is 1 ${hbox {mm}}^{2}$.
机译:本文提出了一种使用0.15-μmu{hbox {m}} $拟态高电子迁移率晶体管工艺的$ W $带三级共源共栅下变频混频器。由于采用了改进的偏置拓扑,电阻混合核心和中频低通滤波器,因此该电路具有非常宽的中频带宽。此外,该混频器使用三级共源共栅结构,以实现高本地振荡器(LO)与RF的隔离以及紧凑的芯片面积。测量结果表明,该混频器在dc至26 GHz IF带宽的情况下实现了9-13 dB的上边带转换损耗,并且LO-to-IF,LO-RF和RF-IF隔离为在86 GHz时具有5 dBm LO功率时分别为38、42和40 dB。当LO功率在96 GHz时为7 dBm时,在DC至24 GHz IF带宽,LO至IF,LO至RF和RF至RF的情况下,上边带转换损耗为10–14 dB。 IF隔离分别为29、41.5和45 dB。功耗为24 mW,芯片面积为1 $ {hbox {mm}} ^ {2} $。

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