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Baseband Equivalent Volterra Series for Digital Predistortion of Dual-Band Power Amplifiers

机译:适用于双频功率放大器数字预失真的基带等效Volterra系列

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This paper proposes a new dual-band baseband equivalent (BBE) Volterra model devised to predict the behavior of dual-band power amplifiers (PAs) and/or to linearize their response. A series of derivations were applied to the original continuous passband Volterra-series expression to uncover a simple formulation that related the BBE envelopes of the output signals in each band to those at the input in the discrete domain. This yielded an inherently low-complexity dual-band Volterra-series model that does not require the empirical pruning commonly applied to the low-pass equivalent Volterra series. The proposed model was successfully applied to digitally predistort and linearize a dual-band 45-W class-AB GaN PA driven with different dual-band dual-standard test signals. For each band, the model necessitated less than 25 coefficients to reduce the adjacent channel leakage power ratio ACLR by up to 25 dB.
机译:本文提出了一种新的双频基带等效(BBE)Volterra模型,该模型旨在预测双频功率放大器(PA)的行为和/或使其响应线性化。将一系列推导应用于原始的连续通带Volterra系列表达式,以揭示一种简单的公式,该公式将每个频带中输出信号的BBE包络与离散域中输入端的BBE包络相关。这样就产生了固有的低复杂度双频带Volterra系列模型,该模型不需要通常应用于低通等效Volterra系列的经验修剪。所提出的模型已成功应用于以不同双频双标准测试信号驱动的双频45W AB类GaN PA的数字预失真和线性化。对于每个频带,该模型需要小于25的系数才能将相邻信道泄漏功率比ACLR降低多达25 dB。

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