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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A 2-Port Stable Negative Capacitance Circuit Design With Unilateral Gain Boosting Technique
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A 2-Port Stable Negative Capacitance Circuit Design With Unilateral Gain Boosting Technique

机译:具有单边增益提升技术的2端口稳定负电容电路设计

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Herein, we present a floating 2-port nonreciprocal negative capacitance (NCAP) circuit that employs a unilateral gain boosting technique by including an asymmetric cross-coupled differential cascode transistor pair. The proposed circuit provides an asymmetric gain characteristic. The forward gain (S21) is increased at the cost of the backward gain (S12). The technique not only provides a boosted forward gain but also stable operation resulting from this reduced backward gain. We further investigate the stability of the NCAP circuit in terms of the output resistances of the current sources in the circuit. The proposed NCAP circuit was implemented in IBM 7RF 180-nm CMOS technology and was designed to have a supply voltage of 3 V and a current of 10 mA. The S-parameter measurements showed a self-resonance frequency of 2.25 GHz. The maximum S21 was -0.2 dB at 1 GHz. In the frequency range from 0.5 to 1.5 GHz, the capacitance was approximately -4 pF, and the difference between S21 and S12 was 8.7-9.6 dB. The size of the core chip was 150 × 190 μm2.
机译:在本文中,我们介绍了一种浮动2端口不可逆负电容(NCAP)电路,该电路通过包括不对称交叉耦合的差分共源共栅晶体管对来采用单边增益提升技术。所提出的电路提供了非对称增益特性。前向增益(S 21 )以后向增益(S 12 )为代价增加。该技术不仅提供了提高的前向增益,而且还提供了由于减小的后向增益而导致的稳定工作。我们将根据电路中电流源的输出电阻进一步研究NCAP电路的稳定性。拟议的NCAP电路是在IBM 7RF 180 nm CMOS技术中实现的,设计为具有3 V的电源电压和10 mA的电流。 S参数测量显示出2.25 GHz的自谐振频率。在1 GHz时,最大S 21 为-0.2 dB。在0.5至1.5 GHz的频率范围内,电容约为-4 pF,S 21 和S 12 之间的差为8.7-9.6 dB。核心芯片的尺寸为150×190μm 2

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