Design method for high frequency amplifier using power gain-boosting technique

摘要

The present invention relates to a method of designing a high frequency amplifier using a power gain enhancement technique and a high frequency amplifier using the method. The maximum unilateral gain (U) of the amplification transistor is obtained, and the final equivalent Y parameter Y ₂₁ / Y ₁₂ end To embed the amplification transistor in the lossless reversible network to increase the maximum available gain up to 6 dB maximum gain than Mason's maximum one gain.