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A 21.7-to-41.7-GHz Injection-Locked LO Generation With a Narrowband Low-Frequency Input for Multiband 5G Communications

机译:具有窄带低频输入的21.7至41.7 GHz注入锁定LO发生器,用于多频带5G通信

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摘要

An injection-locked local oscillator (LO) generation targeting mm-wave multiband 5G communication is presented. With a band-selective injection-locked frequency multiplier (ILFM), the LO generation can operate from 21.7 to 41.7 GHz with a narrowband 6.2-to-8.0-GHz input source. An injection-locked amplifier (IL-amp) is cascaded for harmonic rejection. Fabricated in a 65-nm CMOS process, the proposed LO generation consumes 74.4-mW power with 5.0-dBm output power. A 25.3 input bandwidth is extended to a 63.1 output operating bandwidth with no further phase noise degradation. A -105.6-dBc/Hz phase noise at 1-MHz offset is measured at 24 GHz with a -42.7-dBc integrated phase noise. The LO generation rejects the unwanted harmonics to more than 30.0 dB and occupies 0.52 mm(2).
机译:提出了针对毫米波多频段5G通信的注入锁定本地振荡器(LO)生成。借助频带选择注入锁定倍频器(ILFM),利用6.2GHz至8.0GHz窄带输入源,LO生成频率可在21.7至41.7 GHz范围内运行。注入锁定放大器(IL-amp)级联以抑制谐波。拟议的LO生成采用65 nm CMOS工艺制造,功耗为74.4 mW,输出功率为5.0 dBm。 25.3输入带宽扩展到63.1输出工作带宽,而不会进一步降低相位噪声。在24 GHz下测量了在1 MHz偏移下的-105.6 dBc / Hz相位噪声和-42.7 dBc积分相位噪声。 LO产生将超过30.0 dB的有害谐波抑制,并占据0.52 mm(2)。

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