Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers

Alexander Alt; Hassan Hirshy; Sheng Jiang; Kean Boon Lee; Michael A. Casbon; Peng Chen; Peter A. Houston; Paul J. Tasker; Jonathan Lees

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Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers

机译：包络跟踪功率放大器的GaN HEMT中随着电源电压变化的增益变化分析

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摘要

Envelope tracking (ET) is a promising power amplifier (PA) architecture for current and future communications systems, which uses dynamic modulation of the supply voltage to provide high efficiency and potentially very wide bandwidth over a large dynamic

机译：包络跟踪（ET）是一种适用于当前和未来通信系统的有前途的功率放大器（PA）架构，它使用电源电压的动态调制来提供高效率，并且在较大的动态范围内可能具有非常宽的带宽

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来源
《IEEE Transactions on Microwave Theory and Techniques》 |2019年第7期|2495-2504|共10页
作者
Alexander Alt; Hassan Hirshy; Sheng Jiang; Kean Boon Lee; Michael A. Casbon; Peng Chen; Peter A. Houston; Paul J. Tasker; Jonathan Lees;
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作者单位

Centre for High Frequency Engineering (CHFE) School of Engineering Cardiff University Cardiff U.K.;

Manufacturing Engineering Centre Cardiff University Cardiff U.K.;

Department of Electronic and Electrical Engineering University of Sheffield Sheffi;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Gain; HEMTs; MODFETs; Gallium nitride; Gain measurement; Voltage measurement;

机译：获得;HEMT;MODFET;氮化镓增益测量;电压量测;

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专利

1. Envelope Tracked Pulse Gate Modulated GaN HEMT Power Amplifier for Wireless Transmitters [J] . Jouzdani M., Ebrahimi M.M., Rawat K., Circuits and Systems I: Regular Papers, IEEE Transactions on . 2015,第2期

机译：用于无线发射器的包络跟踪脉冲门调制GaN HEMT功率放大器
2. 100-MHz GaN-HEMT Class-G Supply Modulator for High-Power Envelope-Tracking Applications [J] . Nikolai Wolff, Wolfgang Heinrich, Olof Bengtsson IEEE Transactions on Microwave Theory and Techniques . 2017,第3期

机译：用于大功率包络跟踪应用的100MHz GaN-HEMT G类电源调制器
3. Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator [J] . Florian Corrado, Cappello Tommaso, Paganelli Rudi Paolo, Microwave Theory and Techniques, IEEE Transactions on . 2015,第8期

机译：具有8级数字控制的GaN-on-Si电源调制器的RF大功率放大器的包络跟踪
4. Effect of maximum power supply voltage on envelope tracking power amplifiers using GaN HEMTs [C] . Chin Hsia, Kimball D.F., Asbeck P.M. 2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications . 2011

机译：最大电源电压对使用GaN HEMT的包络跟踪功率放大器的影响
5. Envelope-tracking power supplies for RF power amplifiers in portable applications. [D] . Jiang, Xufeng. 2007

机译：便携式应用中RF功率放大器的包络跟踪电源。
6. Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells [O] . Seil Kim, Min-Pyo Lee, Sung-June Hong, 2018

机译：利用晶体管单元非对称功率组合的Ku波段50 W GaN HEMT功率放大器
7. Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers [O] . Alexander Alt, Hassan Hirshy, Sheng Jiang, 2019

机译：通信跟踪功率放大器GaN HEMTS在通信电压下的增益变化分析
8. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization [R] . Shah, P. B., Qiu, J. X. 2011

机译：用于射频（RF）功率和增益优化的氮化镓（GaN）高电子迁移率晶体管（HEmT）的物理分析

Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers

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