Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator

摘要

This paper presents an envelope tracking (ET) transmitter architecture based on the combination of a novel 3-bit supply modulator and digital predistortion (DPD). The proposed power converter is based on a direct digital-to-analog conversion architecture that implements the binary-coded sum of isolated dc voltages, allowing the synthesis of an output waveform with voltage levels, with a binary distribution in the range (maximum voltage , offset voltage ). This solution provides a better voltage resolution with respect to typical multilevel switched-sources topologies . The improved voltage resolution enables the correction of the residual discretization error in the ET transmitter by means of DPD of the RF signal without the need of an auxiliary linear envelope amplifier. The proposed ET solution has been tested with an L-band 30-W lateral-diffused MOS RF high power amplifier (RF HPA) with 1.4- and 10-MHz long-term-evolution signals. In these conditions the converter demonstrated 92% and 83% efficiency, respectively, whereas the congregate efficiency of the transmitter are 38.3% and 23.9% at 5.5 and 1.9 W of average RF output power, respectively. These performances correspond to an improvement of 17.2 and 17.9 points for the power-added efficiency of the RF HPA and to 13.4 and 13 points of improvement for the efficiency of the enti- e transmitter with respect to fixed bias operation.